Influence of Precursor Temperature on the Bandgap Engineering of Zr-doped CrS for Photovoltaic Application

Lucky Imosobomeh Ikhioya; Laeticia U. Ugwu; Azubuike J.  Ekpunobi

doi:10.20221/jnmsr.v3i1.31

Authors

Lucky Imosobomeh Ikhioya Department of Physics and Astronomy, University of Nigeria Nsukka, 410001 Nsukka, Nigeria https://orcid.org/0000-0002-5959-4427
Laeticia U. Ugwu Department of Physics Education, Federal College of Education (Technical) Umunze, Anambra State, Nigeria
Azubuike J. Ekpunobi Department of Physics and Industrial Physics, Nnamdi Azikiwe University, Awka, Nigeria

DOI:

https://doi.org/10.20221/jnmsr.v3i1.31

Keywords:

Semiconductor, zirconium, CrS, bandgap energy, optical, XRD

Abstract

The physical properties of Zr-doped CrS films were examined in-depth in this study, focusing on the influence of precursor temperature during electrochemical deposition for photovoltaic use. The spectra show a decrease in absorbance from 300 to 600 nm in the visible range and an increase from 650 to 1100 nm in the infrared region. The transparency of chromium sulfide films is enhanced by adding a zirconium dopant at precursor temperatures ranging from 45 to 55℃. The energy bandgap of Zr-doped CrS and CrS varies between 2.35 and 3.33 eV. As the precursor temperature increases, the crystallite size of the CrS and Zr-doped CrS material increases. This shows a better quality and growth of the material's grains. Precursor temperature influences the crystal structure of CrS and Zr-doped CrS films. The studies reveal that variations in the precursor temperature influence the film's crystallinity, phase composition, and grain size.

Author Biography

Lucky Imosobomeh Ikhioya, Department of Physics and Astronomy, University of Nigeria Nsukka, 410001 Nsukka, Nigeria

Complementary Affiliation:
Department of Physics, Federal University, Lokoja, Kogi State, Nigeria

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