Optical Properties of Electrodeposited CdMnS Thin Film Semiconductor Alloys for Optoelectronics Applications: Effect of Deposition Potential
DOI:
https://doi.org/10.20221/jnmsr.v1i.7Keywords:
Optoelectronics, Semiconductors, Bandgap, Electrodeposition, PhotovoltaicAbstract
Optical properties of semiconductor thin film alloys of cadmium manganese sulfide (CdMnS) deposited on fluorine-doped tin oxide (FTO) using an electrodeposition method are investigated for their possible optoelectronic device applications in this work. Cadmium sulphate, manganese sulphate and thiourea were starting materials used to source for sources of Cd, Mn and S ions respectively. A three electrodes configuration was utilized with the FTO serving as working electrode while Platinum rod and Ag/AgCl were used as counter and reference electrode respectively. The deposited thin films were characterized for their optical properties to determine their possible applications in optoelectronic devices. The result showed that the absorbance, absorption coefficient, refractive index and optical conductivity of the deposited thin films of CdMnS are high and influence by deposition voltage. The films have low reflectance and extinction coefficient in the visible and near-infrared regions of the electromagnetic spectrum. The bandgap energy of the films was found to be 2.6 eV, 2.7 eV, 2.8 eV, 2.7 eV and 2.5 eV for the films deposited at 1.6 V, 1.8 V, 2.0 V, 2.2 V and 2.4 V respectively. The structural and morphological properties of the films were also studied and discussed. These observed properties exhibited by films of CdMnS position them for optoelectronic applications, especially in photovoltaic cells for solar energy harnessing.
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